A Parametric Technique for Traps Characterization in AlGaN GaN HEMTs.pdf (1.13 MB)
Download file

A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs

Download (1.13 MB)
journal contribution
posted on 16.05.2022, 13:35 authored by S J Duffy, B Benbakhti, W Zhang, Khaled Ahmeda, K Kalna, M Boucherta, M Mattalah, H O Chahdi, N E Bourzgui, A Soltani

A new parametric and cost-effective tech- nique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a nor- mal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (IS) and drain (ID) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between IS and ID, a bulk charge trapping time constant is found to be independent of both drain (VDS ) and gate (VGS ) biases. Surface charge trapping is found to have a much greater impact on a slow degrada- tion when compared to bulk trapping and self-heating. At a short timescale (< 1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (> 1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping. 

Funding

10.13039/501100004144-Liverpool John Moores University

History

Published in

IEEE Transactions on Electron Devices

Publisher

IEEE

Version

AM (Accepted Manuscript)

Citation

Duffy, S.J., Benbakhti, B., Zhang, W., Ahmeda, K., Kalna, K., Boucherta, M., Mattalah, M., Chahdi, H.O., Bourzgui, N.E. and Soltani, A. (2020) 'A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs', IEEE Transactions on Electron Devices, 67(5), pp.1924-1930.

Print ISSN

0018-9383

Cardiff Met Affiliation

  • Cardiff School of Technologies

Copyright Holder

© The Publisher

Publisher Rights Statement

© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

Language

en